The influence of hydrogen plasma etching on the surface conductivity of the polycrystalline diamond surface and the temperature-dependent properties

With the development of carbon-based electronics, polycrystalline diamond has drawn much attention in electronic devices; as compared to single crystalline diamond, scale can be fabricated over 4 in. more easily. However, until now, influence factors on surface conductivity hydrogen-terminated (H-PCD) are still unclear. In this work, carrier concentration and mobility H-PCD were investigated through Hall effect measurement. It was found that besides roughness, temperature at which equilibrium states adsorption desorption adsorbates established also plays an important role mobility. increase establishment temperature, both show a decreasing tendency, may determined by coefficient ionic scattering, phonon grain boundaries surface. The investigation work will give some insight into control from aspect state roughness.